GC9981 C gc9989 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 schottky barrier diodes ultra high drive monolithic tm ? www. microsemi .com rohs com p liant copyright ? 2007 rev: 2009-01-19 important: for the most current data, consult our web site: www.microsemi.com specifications are subject to change, consult the factor y for further information. these devices are esd sensitive and must be handled use using esd precautions. descri pt i on microsemis schottky barrier devices are currently available in the eight junction ring quad configuration. device s are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. monolithic devices are recommended for highest frequency, broadband designs. the beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in mic applications. our in house epitaxy process capability insures repeatability for lowest conversion loss through ku band. a broad range of unique metallization schemes produce microsemis complete line of barrier heights. diodes are available wi th barrier heights ranging from 600 mv to 1300 mv per leg. by optimizing ep itaxy and metallization, these devices achieve lowest rs-cj products resulting in exceptional conversion loss performance. high rel screening is available on packaged devices per your requirements. this series of devices meets rohs requirements per eu directive 2002/95/ec. appli cat i on s/ben efi t s ? rf mixers ? double balanced mixers ? high speed switching ? motion detection ? phase detectors appli cat i on s schottky barrier diodes are suitable for a variety of circuit applications ranging from double balanced rf mixers to high speed switching and modulation. the monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through ka band. with junction capacitances as low as 0.06 pf. monolithic 8 junction quads are ideally suited for broad band high drive mixers through 26.5 ghz. ultra-high barrier diodes, (gc9980 series) are designed for applications where high drive levels are available, such as, doppler mixers or motion detection. microsemi also has schottky diodes available in ultra-low, medium and high drive levels to fit virtually any circuit requirement. absolu t e m ax i m u m rat i n gs at 2 5 o c (u n less ot h erwi se speci fi ed) rating symbol value unit maximum power handling p 100 mw storage temperature t stg -65 to +175 oc operating temperature t op -65 to +150 oc k ey feat u res ? monolithic design for lowest parasitics and matched junction characteristics ? low noise figure ? suitable for applications to 26.5 ghz ? excellent conversion loss ? available high and ultra-high barrier heights ? can be supplied as monolithic devices for hybrid applications or as packaged devices ? rohs compliant 1 1 these devices are supplied with gold plated terminations. consult factory for details. g g c c 9 9 9 9 8 8 1 1 - - g g g g 9 9 9 9 8 8 9 9 downloaded from: http:///
GC9981 C gc9989 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 schottky barrier diodes ultra high drive monolithic tm ? www. microsemi .com rohs com p liant . ch i p elect ri cal param et ers @ 2 5 ? c (unle ss ot he rw ise spe c ifie d) model 1 number barrier height freq range v b (v) 2 i r =10 a (min) c j (pf) 3 @0v (max) v f (mv) @1 ma (max) r d ( ? ) @10 ma (max) nf ssb (db) 4 (typ) GC9981 ku-ka 0.08 800 25 7 gc9982 x 0.12 780 20 6.5 gc9983 very high c 4.0 0.15 750 15 6.5 gc9984 ku-ka 0.08 1050 25 7 gc9985 x 0.12 1000 20 6.5 gc9986 extra high c 5.0 0.15 950 15 6.5 gc9987 ku-ka 0.08 1300 25 7 gc9988 x 0.12 1250 20 6.5 gc9989 ultra high c 6.0 0.15 1200 15 6.5 notes 1. when ordering, specify appropriate package style. ie: order GC9981-8jr for monolithic 8 junction ring quad. 2. v b measured at 10a on a sample basis only for ring quads. 3. 0 volts, f=1 mhz (diagonal leads on quads). 4. l.o. = 0 dbm, n if = 1.5 db, f = 10 ghz or 3 ghz pack age st y le 8 j r pack age st y le 8 j b pack age st y le 1 2 9 c pack age st y le 1 7 4 c more package style available on request g g c c 9 9 9 9 8 8 1 1 - - g g g g 9 9 9 9 8 8 9 9 copyright ? 200 7 rev: 2009-01-19 downloaded from: http:///
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